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high speed, high gain bipolar npn power transistor with integrated collector-emitter diode and built-in efficient antisaturation network the bul44d2 is stateofart high speed high gain bipolar transistor (h2bip). high dynamic characteristics and lot to lot minimum spread ( 150 ns on storage time) make it ideally suitable for light ballast applications. therefore, there is no need to guarantee an h fe window. main features: ? low base drive requirement ? high peak dc current gain (55 typical) @ i c = 100 ma ? extremely low storage time min/max guarantees due to the h2bip structure which minimizes the spread ? integrated collectoremitter free wheeling diode ? fully characterized and guaranteed dynamic v ce(sat) ? a6 sigmao process providing tight and reproductible parameter spreads it's characteristics make it also suitable for pfc application. ????????????????????????????????? ????????????????????????????????? maximum ratings ????????????????? ????????????????? rating ??????? ??????? symbol ???????? ???????? value ???? ???? unit ????????????????? ????????????????? collectoremitter sustaining voltage ??????? ??????? v ceo ???????? ???????? 400 ???? ???? vdc ????????????????? ????????????????? collectorbase breakdown voltage ??????? ??????? v cbo ???????? ???????? 700 ???? ???? vdc ????????????????? ????????????????? collectoremitter breakdown voltage ??????? ??????? v ces ???????? ???????? 700 ???? ???? vdc ????????????????? ????????????????? emitterbase voltage ??????? ??????? v ebo ???????? ???????? 12 ???? ???? vdc ????????????????? ? ??????????????? ? ????????????????? collector current e continuous e peak (1) ??????? ? ????? ? ??????? i c i cm ???????? ? ?????? ? ???????? 2 5 ???? ? ?? ? ???? adc ????????????????? ? ??????????????? ? ????????????????? base current e continuous base current e peak (1) ??????? ? ????? ? ??????? i b i bm ???????? ? ?????? ? ???????? 1 2 ???? ? ?? ? ???? adc ????????????????? ????????????????? *total device dissipation @ t c = 25 c *derate above 25 c ??????? ??????? p d ???????? ???????? 50 0.4 ???? ???? watt w/ c ????????????????? ????????????????? operating and storage temperature ??????? ??????? t j , t stg ???????? ???????? 65 to 150 ???? ???? c ????????????????????????????????? ????????????????????????????????? thermal characteristics ????????????????? ? ??????????????? ? ? ??????????????? ? ????????????????? thermal resistance e junction to case e junction to ambient ??????? ? ????? ? ? ????? ? ??????? r q jc r q ja ???????? ? ?????? ? ? ?????? ? ???????? 2.5 62.5 ???? ? ?? ? ? ?? ? ???? c/w ????????????????? ????????????????? maximum lead temperature for soldering purposes: 1/8 from case for 5 seconds ??????? ??????? t l ???????? ???????? 260 ???? ???? c (1) pulse test: pulse width = 5 ms, duty cycle 10%. on semiconductor ? semiconductor components industries, llc, 2001 march, 2001 rev. 2 1 publication order number: bul44d2/d bul44d2 power transistors 2 amperes 700 volts 50 watts case 221a09 to220ab
bul44d2 http://onsemi.com 2 electrical characteristics (t c = 25 c unless otherwise noted) ??????????????????? ??????????????????? characteristic ????? ????? symbol ??? ??? min ???? ???? typ ???? ???? max ??? ??? unit ????????????????????????????????? ????????????????????????????????? off characteristics ??????????????????? ? ????????????????? ? ??????????????????? collectoremitter sustaining voltage (i c = 100 ma, l = 25 mh) ????? ? ??? ? ????? v ceo(sus) ??? ? ? ? ??? 400 ???? ? ?? ? ???? 470 ???? ? ?? ? ???? ??? ? ? ? ??? vdc ??????????????????? ??????????????????? collectorbase breakdown voltage (i cbo = 1 ma) ????? ????? v cbo ??? ??? 700 ???? ???? 920 ???? ???? ??? ??? vdc ??????????????????? ? ????????????????? ? ??????????????????? emitterbase breakdown voltage (i ebo = 1 ma) ????? ? ??? ? ????? v ebo ??? ? ? ? ??? 12 ???? ? ?? ? ???? 14.5 ???? ? ?? ? ???? ??? ? ? ? ??? vdc ??????????????? ? ????????????? ? ??????????????? collector cutoff current (v ce = rated v ceo , i b = 0) ????? ? ??? ? ????? @ t c = 25 c @ t c = 125 c ????? ? ??? ? ????? i ceo ??? ? ? ? ??? ???? ? ?? ? ???? ???? ? ?? ? ???? 50 500 ??? ? ? ? ??? m adc ??????????????? ? ????????????? ? ??????????????? collector cutoff current (v ce = rated v ces , v eb = 0) collector cutoff current (v ce = 500 v, v eb = 0) ????? ? ??? ? ????? @ t c = 25 c @ t c = 125 c @ t c = 125 c ????? ? ??? ? ????? i ces ??? ? ? ? ??? ???? ? ?? ? ???? ???? ? ?? ? ???? 50 500 100 ??? ? ? ? ??? m adc ??????????????????? ? ????????????????? ? ??????????????????? emittercutoff current (v eb = 10 vdc, i c = 0) ????? ? ??? ? ????? i ebo ??? ? ? ? ??? ???? ? ?? ? ???? ???? ? ?? ? ???? 100 ??? ? ? ? ??? m adc ????????????????????????????????? ????????????????????????????????? on characteristics ??????????????? ? ????????????? ? ??????????????? baseemitter saturation voltage (i c = 0.4 adc, i b = 40 madc) ????? ? ??? ? ????? @ t c = 25 c @ t c = 125 c ????? ? ??? ? ????? v be(sat) ??? ? ? ? ??? ???? ? ?? ? ???? 0.78 0.65 ???? ? ?? ? ???? 0.9 0.8 ??? ? ? ? ??? vdc ??????????????? ? ????????????? ? ??????????????? (i c = 1 adc, i b = 0.2 adc) ????? ? ??? ? ????? @ t c = 25 c @ t c = 125 c ????? ? ??? ? ????? ??? ? ? ? ??? ???? ? ?? ? ???? 0.87 0.76 ???? ? ?? ? ???? 1 0.9 ??? ? ? ? ??? ??????????????? ? ????????????? ? ??????????????? collectoremitter saturation voltage (i c = 0.4 adc, i b = 40 madc) ????? ? ??? ? ????? @ t c = 25 c @ t c = 125 c ????? ? ??? ? ????? v ce(sat) ??? ? ? ? ??? ???? ? ?? ? ???? 0.25 0.27 ???? ? ?? ? ???? 0.4 0.5 ??? ? ? ? ??? vdc ??????????????? ? ????????????? ? ??????????????? (i c = 1 adc, i b = 0.2 adc) ????? ? ??? ? ????? @ t c = 25 c @ t c = 125 c ????? ? ??? ? ????? ??? ? ? ? ??? ???? ? ?? ? ???? 0.28 0.35 ???? ? ?? ? ???? 0.5 0.6 ??? ? ? ? ??? ??????????????? ? ????????????? ? ??????????????? (i c = 0.4 adc, i b = 20 madc) ????? ? ??? ? ????? @ t c = 25 c @ t c = 125 c ????? ? ??? ? ????? ??? ? ? ? ??? ???? ? ?? ? ???? 0.45 0.67 ???? ? ?? ? ???? 0.65 1 ??? ? ? ? ??? ??????????????? ? ????????????? ? ??????????????? dc current gain (i c = 0.4 adc, v ce = 1 vdc) ????? ? ??? ? ????? @ t c = 25 c @ t c = 125 c ????? ? ??? ? ????? h fe ??? ? ? ? ??? 20 18 ???? ? ?? ? ???? 32 26 ???? ? ?? ? ???? ??? ? ? ? ??? e ??????????????? ? ????????????? ? ??????????????? (i c = 1 adc, v ce = 1 vdc) ????? ? ??? ? ????? @ t c = 25 c @ t c = 125 c ????? ? ??? ? ????? ??? ? ? ? ??? 10 7 ???? ? ?? ? ???? 14 9.5 ???? ? ?? ? ???? ??? ? ? ? ??? ????????????????????????????????? diode characteristics ??????????????? ? ????????????? ? ??????????????? forward diode voltage (i ec = 1 adc) ????? ? ??? ? ????? @ t c = 25 c ????? ? ??? ? ????? v ec ??? ? ? ? ??? ???? ? ?? ? ???? 1.1 ???? ? ?? ? ???? 1.5 ??? ? ? ? ??? v ??????????????? ??????????????? (i ec = 0.4 adc) ????? ????? @ t c = 25 c ????? ????? ??? ??? ???? ???? 0.9 ???? ???? 1.2 ??? ??? ??????????????? ??????????????? (i ec = 0.2 adc) ????? ????? @ t c = 25 c ????? ????? ??? ??? ???? ???? 0.8 ???? ???? 1 ??? ??? ??????????????? ??????????????? (i ec = 0.2 adc) ????? ????? @ t c = 125 c ????? ????? ??? ??? ???? ???? 0.6 ???? ???? ??? ??? ??????????????? ? ????????????? ? ??????????????? forward recovery time (see figure 22 bis) (i f = 0.2 adc, di/dt = 10 a/ m s) ????? ? ??? ? ????? @ t c = 25 c ????? ? ??? ? ????? t fr ??? ? ? ? ??? ???? ? ?? ? ???? 415 ???? ? ?? ? ???? ??? ? ? ? ??? ns ??????????????? ??????????????? (i f = 0.4 adc, di/dt = 10 a/ m s) ????? ????? @ t c = 25 c ????? ????? ??? ??? ???? ???? 390 ???? ???? ??? ??? ??????????????? ??????????????? (i f = 1 adc, di/dt = 10 a/ m s) ????? ????? @ t c = 25 c ????? ????? ??? ??? ???? ???? 340 ???? ???? ??? ???
bul44d2 http://onsemi.com 3 electrical characteristics (t c = 25 c unless otherwise noted) ??????????????????? ??????????????????? characteristic ???? ???? symbol ???? ???? min ???? ???? typ ???? ???? max ??? ??? unit ????????????????????????????????? ????????????????????????????????? dynamic saturation voltage ???????? ? ?????? ? ???????? d y namic saturation ????? ? ??? ? ????? i c = 0.4 a i b1 =40ma ???? ? ?? ? ???? @ 1 m s ????? ? ??? ? ????? @ t c = 25 c @ t c = 125 c ???? ? ?? ? ???? v ce(dsat) ???? ? ?? ? ???? ???? ? ?? ? ???? 3.3 6.8 ???? ? ?? ? ???? ??? ? ? ? ??? v ???????? ???????? dynamic saturation voltage: determined 1 m s and 3 m s res p ectively ????? ????? i b1 = 40 ma v cc = 300 v ???? ???? @ 3 m s ????? ????? @ t c = 25 c @ t c = 125 c ???? ???? ???? ???? ???? ???? 0.5 1.3 ???? ???? ??? ??? v ???????? ? ?????? ? ???????? 3 m s respectively after rising i b1 reaches 90% of final ????? ? ??? ? ????? i c = 1 a i b1 =02a ???? ? ?? ? ???? @ 1 m s ????? ? ??? ? ????? @ t c = 25 c @ t c = 125 c ???? ? ?? ? ???? ???? ? ?? ? ???? ???? ? ?? ? ???? 4.4 12.8 ???? ? ?? ? ???? ??? ? ? ? ??? v ???????? ? ?????? ? ???????? i b1 ????? ? ??? ? ????? i b1 = 0.2 a v cc = 300 v ???? ? ?? ? ???? @ 3 m s ????? ? ??? ? ????? @ t c = 25 c @ t c = 125 c ???? ? ?? ? ???? ???? ? ?? ? ???? ???? ? ?? ? ???? 0.5 1.8 ???? ? ?? ? ???? ??? ? ? ? ??? v ????????????????????????????????? ????????????????????????????????? dynamic characteristics ??????????????????? ??????????????????? current gain bandwidth (i c = 0.5 adc, v ce = 10 vdc, f = 1 mhz) ???? ???? f t ???? ???? ???? ???? 13 ???? ???? ??? ??? mhz ??????????????????? ? ????????????????? ? ??????????????????? output capacitance (v cb = 10 vdc, i e = 0, f = 1 mhz) ???? ? ?? ? ???? c ob ???? ? ?? ? ???? ???? ? ?? ? ???? 50 ???? ? ?? ? ???? 75 ??? ? ? ? ??? pf ??????????????????? ? ????????????????? ? ??????????????????? input capacitance (v eb = 8 vdc) ???? ? ?? ? ???? c ib ???? ? ?? ? ???? ???? ? ?? ? ???? 240 ???? ? ?? ? ???? 500 ??? ? ? ? ??? pf ????????????????????????????????? ????????????????????????????????? switching characteristics: resistive load (d.c. 10%, pulse width = 40 m s) ???????? ???????? turnon time ???????? ???????? i c = 0.5 adc, i b1 = 50 madc i b2 = 250 madc ????? ????? @ t c = 25 c @ t c = 125 c ???? ???? t on ???? ???? ???? ???? 450 600 ???? ???? 600 ??? ??? ns ???????? ? ?????? ? ???????? turnoff time ???????? ? ?????? ? ???????? i b2 = 250 madc v cc = 300 vdc ????? ? ??? ? ????? @ t c = 25 c @ t c = 125 c ???? ? ?? ? ???? t off ???? ? ?? ? ???? 700 ???? ? ?? ? ???? 1300 ???? ? ?? ? ???? 1000 ??? ? ? ? ??? ns ???????? ? ?????? ? ???????? turnon time ???????? ? ?????? ? ???????? i c = 1 adc, i b1 = 0.2 adc i b2 =05adc ????? ? ??? ? ????? @ t c = 25 c @ t c = 125 c ???? ? ?? ? ???? t on ???? ? ?? ? ???? ???? ? ?? ? ???? 90 105 ???? ? ?? ? ???? 150 ??? ? ? ? ??? ns ???????? ???????? turnoff time ???????? ???????? i b2 = 0.5 adc v cc = 300 vdc ????? ????? @ t c = 25 c @ t c = 125 c ???? ???? t off ???? ???? ???? ???? 1.1 1.5 ???? ???? 1.25 ??? ??? m s
bul44d2 http://onsemi.com 4 electrical characteristics (t c = 25 c unless otherwise noted) ??????????????????? ??????????????????? characteristic ???? ???? symbol ???? ???? min ???? ???? typ ???? ???? max ??? ??? unit ????????????????????????????????? ????????????????????????????????? switching characteristics: inductive load (v clamp = 300 v, v cc = 15 v, l = 200 m h) ???????? ? ?????? ? ???????? fall time ???????? ? ?????? ? ???????? ????? ? ??? ? ????? @ t c = 25 c @ t c = 125 c ???? ? ?? ? ???? t f ???? ? ?? ? ???? ???? ? ?? ? ???? 110 105 ???? ? ?? ? ???? 150 ??? ? ? ? ??? ns ???????? ???????? storage time ???????? ???????? i c = 0.4 adc i b1 = 40 madc i b2 = 0 .2 a dc ????? ????? @ t c = 25 c @ t c = 125 c ???? ???? t s ???? ???? ???? ???? 0.55 0.70 ???? ???? 0.75 ??? ??? m s ???????? ? ?????? ? ???????? crossover time ???????? ? ?????? ? ???????? i b2 = 0 . 2 adc ????? ? ??? ? ????? @ t c = 25 c @ t c = 125 c ???? ? ?? ? ???? t c ???? ? ?? ? ???? ???? ? ?? ? ???? 85 80 ???? ? ?? ? ???? 150 ??? ? ? ? ??? ns ???????? ? ?????? ? ???????? fall time ???????? ? ?????? ? ???????? ????? ? ??? ? ????? @ t c = 25 c @ t c = 125 c ???? ? ?? ? ???? t f ???? ? ?? ? ???? ???? ? ?? ? ???? 100 90 ???? ? ?? ? ???? 150 ??? ? ? ? ??? ns ???????? ???????? storage time ???????? ???????? i c = 1 adc i b1 = 0.2 adc i b2 = 0 . 5 a dc ????? ????? @ t c = 25 c @ t c = 125 c ???? ???? t s ???? ???? ???? ???? 1.05 1.45 ???? ???? 1.5 ??? ??? m s ???????? ? ?????? ? ???????? crossover time ???????? ? ?????? ? ???????? i b2 = 0 . 5 adc ????? ? ??? ? ????? @ t c = 25 c @ t c = 125 c ???? ? ?? ? ???? t c ???? ? ?? ? ???? ???? ? ?? ? ???? 100 100 ???? ? ?? ? ???? 175 ??? ? ? ? ??? ns ???????? ? ?????? ? ???????? fall time ???????? ? ?????? ? ???????? ????? ? ??? ? ????? @ t c = 25 c @ t c = 125 c ???? ? ?? ? ???? t f ???? ? ?? ? ???? ???? ? ?? ? ???? 110 180 ???? ? ?? ? ???? 150 ??? ? ? ? ??? ns ???????? ? ?????? ? ???????? storage time ???????? ? ?????? ? ???????? i c = 0.8 adc i b1 = 160 madc i b2 = 1 60 ma dc ????? ? ??? ? ????? @ t c = 25 c @ t c = 125 c ???? ? ?? ? ???? t s ???? ? ?? ? ???? 2.05 ???? ? ?? ? ???? 2.8 ???? ? ?? ? ???? 2.35 ??? ? ? ? ??? m s ???????? ???????? crossover time ???????? ???????? i b2 = 160 madc ????? ????? @ t c = 25 c @ t c = 125 c ???? ???? t c ???? ???? ???? ???? 180 400 ???? ???? 300 ??? ??? ns ???????? ? ?????? ? ???????? fall time ???????? ? ?????? ? ???????? ????? ? ??? ? ????? @ t c = 25 c @ t c = 125 c ???? ? ?? ? ???? t f ???? ? ?? ? ???? ???? ? ?? ? ???? 150 175 ???? ? ?? ? ???? 225 ??? ? ? ? ??? ns ???????? ? ?????? ? ???????? storage time ???????? ? ?????? ? ???????? i c = 0.4 adc i b1 = 40 madc i b2 = 4 0 ma dc ????? ? ??? ? ????? @ t c = 25 c @ t c = 125 c ???? ? ?? ? ???? t s ???? ? ?? ? ???? 1.65 ???? ? ?? ? ???? 2.2 ???? ? ?? ? ???? 1.95 ??? ? ? ? ??? m s ???????? ???????? crossover time ???????? ???????? i b2 = 40 madc ????? ????? @ t c = 25 c @ t c = 125 c ???? ???? t c ???? ???? ???? ???? 150 330 ???? ???? 250 ??? ??? ns
bul44d2 http://onsemi.com 5 typical static characteristics figure 1. dc current gain @ 1 volt 100 80 60 40 20 0 10 1 0.1 0.01 0.001 i c , collector current (amps) h fe , dc current gain t j = 125 c t j = 25 c t j = -20 c v ce = 1 v figure 2. dc current gain @ 5 volt 100 80 60 40 20 0 10 1 0.1 0.01 0.001 i c , collector current (amps) h fe , dc current gain t j = 125 c t j = 25 c t j = -20 c v ce = 5 v figure 3. collector saturation region 4 2 0 1000 100 10 1 i b , base current (ma) i c = 200 ma figure 4. collectoremitter saturation voltage 10 1 0.1 10 1 0.1 0.01 0.001 i c , collector current (amps) t j = 125 c t j = 25 c t j = -20 c i c /i b = 5 v ce , voltage (volts) v ce , voltage (volts) 3 1 t j = 25 c 400 ma 1 a 1.5 a 2 a figure 5. collectoremitter saturation voltage 10 1 0.1 10 0.1 0.01 0.001 i c , collector current (amps) figure 6. collectoremitter saturation voltage 10 1 0.1 1 0.1 0.01 0.001 i c , collector current (amps) t j = 125 c t j = 25 c t j = -20 c v ce , voltage (volts) v ce , voltage (volts) 1 i c /i b = 10 t j = 125 c t j = 25 c t j = -20 c i c /i b = 20
bul44d2 http://onsemi.com 6 typical static characteristics figure 7a. baseemitter saturation region 10 1 0.1 10 0.1 0.01 0.001 i c , collector current (amps) figure 7b. baseemitter saturation region 10 1 0.1 10 0.1 0.01 0.001 i c , collector current (amps) t j = 125 c t j = -20 c v be , voltage (volts) v be , voltage (volts) 1 t j = 125 c t j = 25 c t j = -20 c i c /i b = 10 1 i c /i b = 5 figure 7. baseemitter saturation region 10 1 0.1 1 0.1 0.01 0.001 i c , collector current (amps) figure 8. forward diode voltage 10 1 0.1 10 0.1 0.01 reverse emitter-collector current (amps) 125 c 25 c v be , voltage (volts) forward diode voltage (volts) t j = 125 c t j = -20 c 1 i c /i b = 20 t j = 25 c t j = 25 c
bul44d2 http://onsemi.com 7 typical switching characteristics figure 9. capacitance 1000 10 1 100 10 1 v r , reverse voltage (volts) figure 10. resistive switch time, t on 1000 400 0 2 0.8 0.2 i c , collector current (amps) c, capacitance (pf) 1.4 t, time (ns) 800 600 200 100 c ib (pf) c ob (pf) t j = 25 c f (test) = 1 mhz t j = 125 c t j = 25 c i c /i b = 10 i c /i b = 5 i bon = i boff v cc = 300 v pw = 40 m s figure 11. resistive switch time, t off 4000 2500 1000 2 1 0 i c , collector current (amps) figure 12. inductive storage time, t si @ i c /i b = 5 3 1 0 2 0.8 0.4 i c , collector current (amps) 1.6 2 1.5 0.5 3000 t, time (s) m t, time (s) m 3500 2000 1500 t j = 125 c t j = 25 c i c /i b = 10 i c /i b = 5 i bon = i boff v cc = 300 v pw = 40 m s 2.5 1.2 t j = 125 c t j = 25 c i bon = i boff v cc = 15 v v z = 300 v l c = 200 m h figure 13. inductive switching, t c & t fi @ i c /i b = 5 700 400 0 2 1 0 i c , collector current (amps) figure 14. inductive storage time 4 2 0 15 6 3 h fe , forced gain 12 3 1 500 t, time (ns) 600 300 200 9 , storage time ( t si m s) 100 0.5 1.5 t j = 125 c t j = 25 c i c = 1 a i c = 0.3 a i bon = i boff v cc = 15 v v z = 300 v l c = 200 m h t j = 125 c t j = 25 c i bon = i boff v cc = 15 v v z = 300 v l c = 200 m h i c /i bon = 5 t c t fi
bul44d2 http://onsemi.com 8 typical switching characteristics figure 15. inductive fall time 700 0 15 9 3 h fe , forced gain figure 16. inductive crossover time 1000 400 0 15 6 3 h fe , forced gain 12 800 600 200 500 figure 17. inductive switching, t fi 900 600 0 2 1.2 0.4 i c , collector current (amps) figure 18. inductive switching, t c 2000 0 2 0.8 0.4 i c , collector current (amps) 1.6 1500 1000 500 700 t, time (ns) t, time (ns) 800 500 400 t j = 125 c t j = 25 c i c /i b = 20 1.2 figure 19. inductive storage time, t si 3000 0 3 1 0 i c , collector current (amps) figure 20. inductive storage time, t si 3000 1500 500 2 0.5 0 i c , collector current (amps) 1.5 2500 1000 2000 t, time (ns) 1000 1 0.5 1.5 i bon = i boff v cc = 15 v v z = 300 v l c = 200 m h t j = 125 c t j = 25 c i bon = i boff v cc = 15 v v z = 300 v l c = 200 m h t fi , fall time (ns) t c , crossover time (ns) 600 400 300 200 100 57 1113 t j = 125 c t j = 25 c i c = 0.3 a i c = 1 a i boff = i bon v cc = 15 v v z = 300 v l c = 200 m h 9 i bon = i boff v cc = 15 v v z = 300 v l c = 200 m h t j = 125 c t j = 25 c i c = 1 a i c = 0.3 a 300 200 100 0.8 1.6 i c /i b = 10 i bon = i boff v cc = 15 v v z = 300 v l c = 200 m h t j = 125 c t j = 25 c i boff = i c /2 v cc = 15 v v z = 300 v l c = 200 m h i c /i b = 20 i c /i b = 10 t, time (ns) 2 2.5 i c /i b = 5 i b = 50 ma i b = 100 ma i b = 200 ma i b = 500 ma 2000 i c /i b = 20 i c /i b = 10
bul44d2 http://onsemi.com 9 typical switching characteristics figure 21. dynamic saturation voltage measurements time figure 22. inductive switching measurements 10 4 0 8 2 0 time 6 8 6 2 figure 23. bis. t fr measurements 0 10 6 0 v f i f 4 28 9 7 5 3 1 13 5 7 v ce 0 v i b 90% i b 1 m s 3 m s dyn 1 m s dyn 3 m s i b i c v clamp t si t c t fi 90% i c 10% i c 90% i b1 4 10% v clamp v fr (1.1 v f unless otherwise specified) v frm t fr v f 0.1 v f 10% i f
bul44d2 http://onsemi.com 10 table 1. inductive load switching drive circuit v (br)ceo(sus) l = 10 mh r b2 = v cc = 20 volts i c(pk) = 100 ma inductive switching l = 200 m h r b2 = 0 v cc = 15 volts r b1 selected for desired i b1 rbsoa l = 500 m h r b2 = 0 v cc = 15 volts r b1 selected for desired i b1 +15 v 1 m f 150 w 3 w 100 w 3 w mpf930 +10 v 50 w common -v off 500 m f mpf930 mtp8p10 mur105 mje210 mtp12n10 mtp8p10 150 w 3 w 100 m f i out a r b1 r b2 1 m f i c peak v ce peak v ce i b i b 1 i b 2
bul44d2 http://onsemi.com 11 second breakdown derating thermal derating figure 24. forward bias safe operating area 10 0.01 1000 10 v ce , collector-emitter voltage (volts) figure 25. reverse bias safe operating area 2.5 1 0 900 200 v ce , collector-emitter voltage (volts) 100 1 0.1 i c , collector current (amps) i c , collector current (amps) dc 5 ms 1 ms 10 m s 1 m s 0.5 0 v -1.5 v -5 v t c 125 c gain 4 l c = 500 m h 300 400 700 600 2 1.5 typical characteristics 500 800 figure 26. forward bias power derating 1 0 160 100 20 t c , case temperature ( c) 0.8 power derating factor 0.6 0.4 0.2 60 140 40 80 120 extended soa there are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. safe operating area curves indicate i c v ce limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figure 24 is based on t c = 25 c; t j(pk) is variable depending on power level. second breakdown pulse limits are valid for duty cycles to 10% but must be derated when t c > 25 c. second breakdown limitations do not derate the same as thermal limitations. allowable current at the voltages shown on figure 24 may be found at any case temperature by using the appropriate curve on figure 26. t j(pk) may be calculated from the data in figure 27. at any case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. for inductive loads, high voltage and current must be sustained simultaneously during turnoff with the base to emitter junction reverse biased. the safe level is specified as a reverse biased safe operating area (figure 25). this rating is verified under clamped conditions so that the device is never subjected to an avalanche mode.
bul44d2 http://onsemi.com 12 typical thermal response figure 27. typical thermal response (z q jc (t)) for bul44d2 1 0.01 10 0.1 0.01 t, time (ms) 0.1 1 100 1000 r(t), transient thermal resistance (normalized) r q jc (t) = r(t) r q jc r q jc = 2.5 c/w max d curves apply for power pulse train shown read time at t 1 t j(pk) - t c = p (pk) r q jc (t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 0.05 single pulse 0.5 0.2 0.1 0.02 typical static characteristics figure 28. bvcer 1100 700 400 1000 100 10 r be ( w ) figure 29. forward recovery time t fr 440 360 300 2 1 0.5 0 i f , forward current (amp) di/dt = 10 a/ m s t c = 25 c bvcer (volts) t j = 25 c 1.5 bvcer (volts) @ 10 ma t fr , forward recovery time (ns) 1000 900 800 600 500 420 400 380 340 320 bvcer(sus) @ 200 ma
bul44d2 http://onsemi.com 13 package dimensions case 221a09 issue aa to220ab notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension z defines a zone where all body and lead irregularities are allowed. dim min max min max millimeters inches a 0.570 0.620 14.48 15.75 b 0.380 0.405 9.66 10.28 c 0.160 0.190 4.07 4.82 d 0.025 0.035 0.64 0.88 f 0.142 0.147 3.61 3.73 g 0.095 0.105 2.42 2.66 h 0.110 0.155 2.80 3.93 j 0.018 0.025 0.46 0.64 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.15 1.52 n 0.190 0.210 4.83 5.33 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.15 1.39 t 0.235 0.255 5.97 6.47 u 0.000 0.050 0.00 1.27 v 0.045 --- 1.15 --- z --- 0.080 --- 2.04 b q h z l v g n a k f 123 4 d seating plane t c s t u r j
bul44d2 http://onsemi.com 14 notes
bul44d2 http://onsemi.com 15 notes
bul44d2 http://onsemi.com 16 on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information central/south america: spanish phone : 3033087143 (monfri 8:00am to 5:00pm mst) email : onlitspanish@hibbertco.com tollfree from mexico: dial 018002882872 for access then dial 8662979322 asia/pacific : ldc for on semiconductor asia support phone : 13036752121 (tuefri 9:00am to 1:00pm, hong kong time) toll free from hong kong & singapore: 00180044223781 email : onlitasia@hibbertco.com japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. bul44d2/d north america literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com fax response line: 3036752167 or 8003443810 toll free usa/canada n. american technical support : 8002829855 toll free usa/canada europe: ldc for on semiconductor european support german phone : (+1) 3033087140 (monfri 2:30pm to 7:00pm cet) email : onlitgerman@hibbertco.com french phone : (+1) 3033087141 (monfri 2:00pm to 7:00pm cet) email : onlitfrench@hibbertco.com english phone : (+1) 3033087142 (monfri 12:00pm to 5:00pm gmt) email : onlit@hibbertco.com european tollfree access*: 0080044223781 *available from germany, france, italy, uk, ireland

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